Understanding the stress state in the earth's crust is crucial for engineers working in rock, particularly with regard to underground construction. Experience shows that an adequately high horizontal in-situ stress has a positive effect in stabilizing large span rock caverns close to the ground surface. On the other hand, high stresses resulting from large overburden, for example, may cause spalling and rock burst, threatening the integrity of the construction. The location, orientation and support design of underground structures takes into account the magnitude and orientation of in-situ rock stresses, considering such factors as gravity, topography, tectonics, residual stress, pore pressure change and geological structures. An accurate knowledge of in-situ rock stress can only be obtained by physical measurement, and over the last few years there has been substantial development in techniques and in interpretation of the results. The papers in this volume will be of particular interest to those working in tunnelling and mining and in petroleum exploration and production.

China is a large developing economy and it has been deeply involved in globalization since its economic reform and opening-up. Simultaneously, China has seen a significant change in the spatial distribution of economic resources, especially capital and labor. In the recent 10 years, economists have made significant progress in both theoretical and empirical studies on related topics. The book provides an overview on the existing literature and current policy debates on what we have known and what we have misunderstood. This book includes an analytical framework of the New Economic Geography (NEG) with political economy to help us understand China's regional development issues. The book of 10 chapters is organized into four thematic sections. The first section is a theoretical discussion on the relationship between economic agglomeration and interregional balanced development. The second section is a political economy analysis on regional and urban-rural development. The third section provides a summary on empirical literatures concerning from market segmentation and institutional barriers to production factor mobility. The final section consists of four empirical chapters on the relationship between agglomeration and balance, which is the core of relevant policy debates. The book argues that for China to achieve both efficiency and balance for regional development, China may need to reform its systems which constrain production factors mobility. This book is a valuable reference for readers who are interested in spatial economics and the Chinese economy, especially its regional and urban development.

China is a large developing economy and it has been deeply involved in globalization since its economic reform and opening-up. Simultaneously, China has seen a significant change in the spatial distribution of economic resources, especially capital and labor. In the recent 10 years, economists have made significant progress in both theoretical and empirical studies on related topics. The book provides an overview on the existing literature and current policy debates on what we have known and what we have misunderstood. This book includes an analytical framework of the New Economic Geography (NEG) with political economy to help us understand China's regional development issues. The book of 10 chapters is organized into four thematic sections. The first section is a theoretical discussion on the relationship between economic agglomeration and interregional balanced development. The second section is a political economy analysis on regional and urban-rural development. The third section provides a summary on empirical literatures concerning from market segmentation and institutional barriers to production factor mobility. The final section consists of four empirical chapters on the relationship between agglomeration and balance, which is the core of relevant policy debates. The book argues that for China to achieve both efficiency and balance for regional development, China may need to reform its systems which constrain production factors mobility. This book is a valuable reference for readers who are interested in spatial economics and the Chinese economy, especially its regional and urban development.

The thirty papers published in this book represent the latest developments in Discontinuous Deformation Analysis (DDA). The Numerical Manifold Method (NMM) and other numerical methods and their applications are also covered, as are the theoretical contributions of 3D DDA, modelling and visualization of 3D joint systems, and high-order NMM. Applications of these advances include the stability of underground works, rock slopes and boreholes.

This book explains the relationships between equality and efficiency, as well as between government and market, in urban-rural and regional development by providing theoretical frameworks and empirical evidence. Urban-rural development in China is understood from a regional perspective, while the core issue of urban-rural and regional development is cross-regional resource reallocation driven by the trends of globalization, marketization and urbanization and their influence on growth and inequality. The book puts forward the following arguments: An urban-rural and regional balance should not be achieved by limiting agglomeration effects in eastern regions. For some time now, China has lacked a suitable mechanism to enable residents in underdeveloped and rural areas to share in the achievements of economic agglomeration. As a result, China should not slow down economic agglomeration and development in eastern regions simply by depending on administrative means to balance urban-rural and regional development. In the final analysis, arriving at a regional balance depends on growth in the eastern regions, provided a reasonable mechanism is implemented to enable inland areas to share in the development achievements of eastern regions. In turn, finding an urban-regional balance rests on urban development, as long as more rural workers can move to and prosper in cities.

This book focuses on the experimental and theoretical aspects of the time-dependent breakdown of advanced dielectric films used in gigascale electronics. Coverage includes the most important failure mechanisms for thin low-k films, new and established experimental techniques, recent advances in the area of dielectric failure, and advanced simulations/models to resolve and predict dielectric breakdown, all of which are of considerable importance for engineers and scientists working on developing and integrating present and future chip architectures. The book is specifically designed to aid scientists in assessing the reliability and robustness of electronic systems employing low-k dielectric materials such as nano-porous films. Similarly, the models presented here will help to improve current methodologies for estimating the failure of gigascale electronics at device operating conditions from accelerated lab test conditions. Numerous graphs, tables, and illustrations are included to facilitate understanding of the topics. Readers will be able to understand dielectric breakdown in thin films along with the main failure modes and characterization techniques. In addition, they will gain expertise on conventional as well as new field acceleration test models for predicting long term dielectric degradation.

This unique book covers the fundamental principle of electron diffraction, basic instrumentation of RHEED, definitions of textures in thin films and nanostructures, mechanisms and control of texture formation, and examples of RHEED transmission mode measurements of texture and texture evolution of thin films and nanostructures. Also presented is a new application of RHEED in the transmission mode called RHEED pole figure technique that can be used to monitor the texture evolution in thin film growth and nanostructures and is not limited to single crystal epitaxial film growth. Details of the construction of RHEED pole figures and the interpretation of observed pole figures are presented. Materials covered include metals, semiconductors, and thin insulators. This book also: Presents a new application of RHEED in the transmission mode Introduces a variety of textures from metals, semiconductors, compound semiconductors, and their characteristics in RHEED pole figures Provides examples of RHEED measurements of texture and texture evolution, construction of RHEED pole figures, and interpretation of observed pole figures RHEED Transmission Mode and Pole Figures: Thin Film and Nanostructure Texture Analysis is ideal for researchers in materials science and engineering and nanotechnology.

Metal-dielectric interfaces are ubiquitous in modern electronics. As advanced gigascale electronic devices continue to shrink, the stability of these interfaces is becoming an increasingly important issue that has a profound impact on the operational reliability of these devices. In this book, the authors present the basic science underlying the thermal and electrical stability of metal-dielectric interfaces and its relationship to the operation of advanced interconnect systems in gigascale electronics. Interface phenomena, including chemical reactions between metals and dielectrics, metallic-atom diffusion, and ion drift, are discussed based on fundamental physical and chemical principles. Schematic diagrams are provided throughout the book to illustrate interface phenomena and the principles that govern them. Metal-Dielectric Interfaces in Gigascale Electronics provides a unifying approach to the diverse and sometimes contradictory test results that are reported in the literature on metal-dielectric interfaces. The goal is to provide readers with a clear account of the relationship between interface science and its applications in interconnect structures. The material presented here will also be of interest to those engaged in field-effect transistor and memristor device research, as well as university researchers and industrial scientists working in the areas of electronic materials processing, semiconductor manufacturing, memory chips, and IC design.

This book is an empirical study on the relationship between private enterprises, entrepreneurs and the government in P. R. China. The two authors conducted a detailed survey of enterprises and entrepreneurs in Liuzhou, Guangxi Zhuang Autonomous Region, China. Although it was only conducted in a medium sized city, the survey provides a rare source of information on matched entrepreneur-enterprise pairs. It provides detailed information on management, performance, enterprise-government relationship, as well as entrepreneurs' personal information and measurements of various psychological parameters. With this first-hand information, the authors analyzed several interesting issues concerning enterprise-entrepreneur-government relationships. Readers will gain an understanding of the following topics: Why and how does China have such special enterprise-entrepreneur-government relationships? Do enterprises' political connections in the form of entrepreneurs' political status help improve the performances of these enterprises? Which of the surveyed entrepreneurs could become members of the People's Congress and the People's Political Consulting Conference? How do entrepreneurs feel when they are faced with greater government intervention? How will China move ahead in the ongoing reform and development in the light of the enterprise-entrepreneur-government relationship? This book examines the way in which China's enterprise-entrepreneur-government relationship helps enterprises develop in a transitional market. In the appendix to this book, one of the authors, Ming Lu, provides evidence, based on data from listed companies, that having political connections can help enterprises enter the markets of provinces other than their place of registration. However, this political connection also distorts the market by giving the entrepreneurs more opportunities to develop their business. At the same time, those entrepren eurs who face interventions from the government also shoulder greater costs in the form of loss of psychological happiness. The inference of this book is that at some point in the foreseeable future, China will gradually build its market system and integrate its domestic markets, so that private enterprises will no longer rely so heavily on their political connections.

This book is an empirical study on the relationship between private enterprises, entrepreneurs and the government in P. R. China. The two authors conducted a detailed survey of enterprises and entrepreneurs in Liuzhou, Guangxi Zhuang Autonomous Region, China. Although it was only conducted in a medium sized city, the survey provides a rare source of information on matched entrepreneur-enterprise pairs. It provides detailed information on management, performance, enterprise-government relationship, as well as entrepreneurs' personal information and measurements of various psychological parameters. With this first-hand information, the authors analyzed several interesting issues concerning enterprise-entrepreneur-government relationships. Readers will gain an understanding of the following topics: Why and how does China have such special enterprise-entrepreneur-government relationships? Do enterprises' political connections in the form of entrepreneurs' political status help improve the performances of these enterprises? Which of the surveyed entrepreneurs could become members of the People's Congress and the People's Political Consulting Conference? How do entrepreneurs feel when they are faced with greater government intervention? How will China move ahead in the ongoing reform and development in the light of the enterprise-entrepreneur-government relationship? This book examines the way in which China's enterprise-entrepreneur-government relationship helps enterprises develop in a transitional market. In the appendix to this book, one of the authors, Ming Lu, provides evidence, based on data from listed companies, that having political connections can help enterprises enter the markets of provinces other than their place of registration. However, this political connection also distorts the market by giving the entrepreneurs more opportunities to develop their business. At the same time, those entrepren eurs who face interventions from the government also shoulder greater costs in the form of loss of psychological happiness. The inference of this book is that at some point in the foreseeable future, China will gradually build its market system and integrate its domestic markets, so that private enterprises will no longer rely so heavily on their political connections.

This book explains the relationships between equality and efficiency, as well as between government and market, in urban-rural and regional development by providing theoretical frameworks and empirical evidence. Urban-rural development in China is understood from a regional perspective, while the core issue of urban-rural and regional development is cross-regional resource reallocation driven by the trends of globalization, marketization and urbanization and their influence on growth and inequality. The book puts forward the following arguments: An urban-rural and regional balance should not be achieved by limiting agglomeration effects in eastern regions. For some time now, China has lacked a suitable mechanism to enable residents in underdeveloped and rural areas to share in the achievements of economic agglomeration. As a result, China should not slow down economic agglomeration and development in eastern regions simply by depending on administrative means to balance urban-rural and regional development. In the final analysis, arriving at a regional balance depends on growth in the eastern regions, provided a reasonable mechanism is implemented to enable inland areas to share in the development achievements of eastern regions. In turn, finding an urban-regional balance rests on urban development, as long as more rural workers can move to and prosper in cities.

Diffusion Barrier Stack - 5 nm -3 nm -2 nm :. . . -. . . . : . . O. 21-lm Figure 2: Schematic representing a cross-sectional view of the topography that is encountered in the processing of integrated circuits. (Not to scale) these sub-micron sized features is depicted in Fig. 2. The role of the diffusion barrier is to prevent the diffusion of metallic ions into the interlayer dielectric (lLD). Depending on the technology, in particular the choice of the ILD and the metal interconnect, the diffusion barrier may be Ti, Ta, TiN, TaN, or a multi-layered structure of these materials. The adhesion of the barrier to the dielectric, the conformality of the barrier to the feature, the physical structure of the film, and the chemical composition of the film are key issues that are determined in part by the nature of the deposition process. Likewise, after the growth of the barrier, a conducting layer (the seed layer) is needed for subsequent filling of the trench by electrochemical deposition. Again, the growth process must be able to deposit a film that is continuous along the topography of the sub-micron sized features. Other factors of concern are the purity and the texture of the seed layer, as both of these factors influence the final resistivity of the metallic interconnect. Sputter-deposited coatings are also commonly employed for their electro-optical properties. For example, an electrochromic glazing is used to control the flux of light that is transmitted through a glazed material.

This unique book covers the fundamental principle of electron diffraction, basic instrumentation of RHEED, definitions of textures in thin films and nanostructures, mechanisms and control of texture formation, and examples of RHEED transmission mode measurements of texture and texture evolution of thin films and nanostructures. Also presented is a new application of RHEED in the transmission mode called RHEED pole figure technique that can be used to monitor the texture evolution in thin film growth and nanostructures and is not limited to single crystal epitaxial film growth. Details of the construction of RHEED pole figures and the interpretation of observed pole figures are presented. Materials covered include metals, semiconductors, and thin insulators. This book also: Presents a new application of RHEED in the transmission mode Introduces a variety of textures from metals, semiconductors, compound semiconductors, and their characteristics in RHEED pole figures Provides examples of RHEED measurements of texture and texture evolution, construction of RHEED pole figures, and interpretation of observed pole figures RHEED Transmission Mode and Pole Figures: Thin Film and Nanostructure Texture Analysis is ideal for researchers in materials science and engineering and nanotechnology.

Metal-dielectric interfaces are ubiquitous in modern electronics. As advanced gigascale electronic devices continue to shrink, the stability of these interfaces is becoming an increasingly important issue that has a profound impact on the operational reliability of these devices. In this book, the authors present the basic science underlying the thermal and electrical stability of metal-dielectric interfaces and its relationship to the operation of advanced interconnect systems in gigascale electronics. Interface phenomena, including chemical reactions between metals and dielectrics, metallic-atom diffusion, and ion drift, are discussed based on fundamental physical and chemical principles. Schematic diagrams are provided throughout the book to illustrate interface phenomena and the principles that govern them. Metal-Dielectric Interfaces in Gigascale Electronics provides a unifying approach to the diverse and sometimes contradictory test results that are reported in the literature on metal-dielectric interfaces. The goal is to provide readers with a clear account of the relationship between interface science and its applications in interconnect structures. The material presented here will also be of interest to those engaged in field-effect transistor and memristor device research, as well as university researchers and industrial scientists working in the areas of electronic materials processing, semiconductor manufacturing, memory chips, and IC design.

Chemical Vapor Deposition Polymerization - The Growth and Properties of Parylene Thin Films is intended to be valuable to both users and researchers of parylene thin films. It should be particularly useful for those setting up and characterizing their first research deposition system. It provides a good picture of the deposition process and equipment, as well as information on system-to-system variations that is important to consider when designing a deposition system or making modifications to an existing one. Also included are methods to characterizae a deposition system's pumping properties as well as monitor the deposition process via mass spectrometry. There are many references that will lead the reader to further information on the topic being discussed.
This text should serve as a useful reference source and handbook for scientists and engineers interested in depositing high quality parylene thin films.

The focus of this book is on modeling and simulations used in research on the morphological evolution during film growth. The authors emphasize the detailed mathematical formulation of the problem. The book will enable readers themselves to set up a computational program to investigate specific topics of interest in thin film deposition. It will benefit those working in any discipline that requires an understanding of thin film growth processes.

The focus of this book is on modeling and simulations used in research on the morphological evolution during film growth. The authors emphasize the detailed mathematical formulation of the problem. The book will enable readers themselves to set up a computational program to investigate specific topics of interest in thin film deposition. It will benefit those working in any discipline that requires an understanding of thin film growth processes.

Chemical Vapor Deposition Polymerization - The Growth and Properties of Parylene Thin Films is intended to be valuable to both users and researchers of parylene thin films. It should be particularly useful for those setting up and characterizing their first research deposition system. It provides a good picture of the deposition process and equipment, as well as information on system-to-system variations that is important to consider when designing a deposition system or making modifications to an existing one. Also included are methods to characterizae a deposition system's pumping properties as well as monitor the deposition process via mass spectrometry. There are many references that will lead the reader to further information on the topic being discussed.
This text should serve as a useful reference source and handbook for scientists and engineers interested in depositing high quality parylene thin films.

Diffusion Barrier Stack - 5 nm -3 nm -2 nm :. . . -. . . . : . . O. 21-lm Figure 2: Schematic representing a cross-sectional view of the topography that is encountered in the processing of integrated circuits. (Not to scale) these sub-micron sized features is depicted in Fig. 2. The role of the diffusion barrier is to prevent the diffusion of metallic ions into the interlayer dielectric (lLD). Depending on the technology, in particular the choice of the ILD and the metal interconnect, the diffusion barrier may be Ti, Ta, TiN, TaN, or a multi-layered structure of these materials. The adhesion of the barrier to the dielectric, the conformality of the barrier to the feature, the physical structure of the film, and the chemical composition of the film are key issues that are determined in part by the nature of the deposition process. Likewise, after the growth of the barrier, a conducting layer (the seed layer) is needed for subsequent filling of the trench by electrochemical deposition. Again, the growth process must be able to deposit a film that is continuous along the topography of the sub-micron sized features. Other factors of concern are the purity and the texture of the seed layer, as both of these factors influence the final resistivity of the metallic interconnect. Sputter-deposited coatings are also commonly employed for their electro-optical properties. For example, an electrochromic glazing is used to control the flux of light that is transmitted through a glazed material.

A selection of life drawings from contemporary artist, Liang Guo, showcases his masterful artistic expressions that captured his passion and unique insight to features, characters and emotions of our time.

On construction sites, the digital photos have been routinely applied for project management, such as documentation of daily activities and provision of visual aids for better communication. With the advance of the surveying technique of close-range photogrammetry, information from the two-dimensional (2D) digital images can be extracted to construct three-dimensional (3D) knowledge, which is of great assistance for site engineers, for example, to sketch profiles of site elements, measure structure geometric dimensions, and track progress states of an ongoing product. For the benefit of construction professionals who are interested in utilizing or developing close-range photogrammetry, this book introduces the fundamentals of this technique and applies it to analytically 1) model 3D construction site elements by point and shoot photography, 2) measure the geometric dimensions of building products, and 3) augment site photos with 3D graphics of underground facilities for better quality investigation and progress visualization of infrastructure construction.

This volume is a report by leading international economic experts on China's economic priorities in the coming years. From various aspects of the domestic and foreign situation, China has now reached a critical juncture in its economic development. Unless China is able to overcome the difficulties in undertaking further reforms in the next ten years, China would be caught in the middle-income trap and be unable to become a modern country. The future course of China's economic development is also of great concern to the rest of the world because the socio-political-economic conditions in China will have significant impact on global economic prosperity and on global political harmony.The book is a product of close collaboration between the School of Economics at Fudan University and the Earth Institute at Columbia University. They cover a new paradigm for growth, short-term demand management, institutional reforms for middle-term growth, and strengthening the fundamentals for long-term growth.

This volume is a report by leading international economic experts on China's economic priorities in the coming years. From various aspects of the domestic and foreign situation, China has now reached a critical juncture in its economic development. Unless China is able to overcome the difficulties in undertaking further reforms in the next ten years, China would be caught in the middle-income trap and be unable to become a modern country. The future course of China's economic development is also of great concern to the rest of the world because the socio-political-economic conditions in China will have significant impact on global economic prosperity and on global political harmony.The book is a product of close collaboration between the School of Economics at Fudan University and the Earth Institute at Columbia University. They cover a new paradigm for growth, short-term demand management, institutional reforms for middle-term growth, and strengthening the fundamentals for long-term growth.